Abstract
The time evolution of exposure contours in poly-(methyl methacrylate) (PMMA) electron resist is calculated for several time-dependent developers comprised of various proportions of methyl isobutyl ketone (MIBK) and isopropyl alcohol (IPA). Contours are calculated for a line of charge incident on 4000 Å of resist coated on a low-atomic-number substrate. Parameters such as beam energy, incident charge per unit length, original molecular weight, and developer temperature are considered. The use of a time-dependent developer greatly influences the shape of the developed contours and the development time. The more active the developer (expressed in terms of the PMMA solubility rate), the greater the influence of developer time on the contours. Use of higher beam energies results in developed contours confined closer to the beam axis and less sensitive to development time. The incident charge per unit length is very important. For the MIBK developer and at low doses the characteristic undercut phenomenon is not obtained except for long development times, resulting in an increase in linewidth and a reduction in original resist thickness. The principal result of using lower original molecular weight and/or higher developer temperature is to reduce the development time for a given contour.
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