Abstract
With the downscaling of MOSFETs to nanometer dimensions, performance variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and remain static over lifetime. Besides these time-zero variability factors, factors that lead to performance variability from one instant in time to the other start playing a significant role. Random Telegraph Noise (RTN) is among these relevant time-dependent variability sources. In this work we advance the state of the art on modeling of the time-dependent random variability induced by RTN, by providing an analytical model for the threshold voltage jitter σ Δ VT produced by RTN. Besides analytical modeling, Monte Carlo simulations are run to validate the model and illustrate the applicability of the model. The area scaling of σΔV T is detailed and discussed, supporting designers in transistor sizing towards a more reliable design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
