Abstract
A comprehensive model for the analysis of distributed-feedback (DFB)-type semiconductor optical amplifiers (SOAs) both in time- and frequency-domain is developed by combination of a wideband field-based traveling-wave rate equation model and an extended transfer matrix formalism for corrugated structures derived in spectral domain. The numerical implementation of the model is successfully fulfilled by dividing the device into many short segments along the cavity length. Based on this unique model, some time- and spectral-domain properties, such as amplified spontaneous emission, laser action, and signal amplification of DFB-type gain-clamped SOAs are simulated and analyzed.
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