Abstract
We study the process of growth of graphene by the SiC surface decomposition method to improve the technique of growing graphene. In this study, the initial stage of the graphitization process on a periodically faceted SiC surface is investigated by the Naval Research Laboratory tight-binding approach. The results suggest that the decomposition of the SiC surface started by the desorption of Si atoms at the step edge. It is also found that released C atoms are trapped at the step-edge sites and that neighboring Si atoms are subsequently desorbed. These results suggest that graphene nucleation on the SiC surface proceeds in a negative step-flow mode.
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