Abstract
The band structure of InP is excellently produced using sp3d5s* tight-binding model. The spin-orbit splitting in the whole Brillouin zone derived from the InP Γ-valley of the lowest electronic subband, heavy hole, light hole and split-off hole is calculated. Considering the hot electron effect, the cases of L and X-valleys for the lowest electronic subband are also discussed. We then further present the electron spin-orbit coupling coefficient around the corresponding valley bottom. Our results should provide a promising direction for future research on spintronics.
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