Abstract
This paper presents threshold voltage shifts (Δ|Vth|) and their variability in p-channel metal–oxide–semiconductor field effect transistors (pMOSFETs) by the high voltage ON- and OFF-state stress. Measurement data show that Δ|Vth| in pFETs by the high voltage ON- and OFF-state stress depends on gate length and gate width. Larger positive Δ|Vth| by the ON-state stress is obtained in shorter gate length and narrower gate width pFETs and the negative Δ|Vth| by the OFF-state stress is observed only in the narrowest pFETs. It is also found that variability of Δ|Vth| by the ON-state stress shows normal distribution and roughly follows the Pelgrom plot, indicating that the total trapped charges by the ON-state stress are randomly placed. These measurement data provide clear device design guidelines for the post-fabrication self-improvement scheme of static random access memory (SRAM) cell stability.
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