Abstract
A description of the calculation of the cross-section for the atomic displacement σ by energetic electrons, versus penetration depth x, is given. Curves of σ(x) computed for various values of the threshold energy for displacement are given in the case of silicon. The profiles of the concentration of the defects introduced by electron irradiation of various energies in silicon is determined from capacitance-voltage measurements on gold-silicon Schottky diodes. The measurement of the defect creation rates at zero depth gives 20.5 ± 1 eV for the threshold energy.
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