Abstract
A theoretical analysis and computer simulation of the threshold current density jth andcharacteristic temperature T0 of multiple quantum well lasers (MQWLs) are presented.Together with the spontaneous radiative recombination, the Auger recombination and the lateraldiffusive leakage of carriers from the active region are included into the model.A first-principle calculation of the Auger recombination current is performed.It is shown that the lateral diffusive leakage current is controlled by the radiative and Auger currents.When calculating the carrier densities, the electrons in the barrier regions are properly taken into account.Redistribution of electrons over the active region is shown toincrease the threshold current considerably.The dependences of jth and T0 on temperature, number of QWs, cavity length and lateralsize are discussed in detail.The effect of lattice and carrier heating on jth and T0 is investigated and shown to be essentialat high temperature.
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