Abstract
The synthesis and crystal structure of four gallium sulphide open frameworks, built from supertetrahedral clusters, are described. The structures of [ C 4 NH 12 ] 6 [ Ga 10 S 18 ] (1) and [ C 4 NH 12 ] 12 [ Ga 20 S 35.5 ( S 3 ) 0.5 O ] (2) contain supertetrahedral T3 clusters, while in the isostructural compounds [ C 4 NH 12 ] 16 [ Ga 10 S 18 M 4 Ga 16 S 33 ] ( M = Co (3), Zn ( 4)), T3 and T4 clusters alternate. These materials exhibit three-dimensional frameworks, with topologies consisting of two interpenetrating diamond lattices, and contain over 50% of solvent accessible void space. UV–Vis diffuse reflectance measurements indicate that these compounds are semiconducting, with band gaps over the range 3.4–4.1 eV.
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