Abstract
We investigated the crystal structures, electrical transport properties, and three-terminal (3T) Hanle signals of Co2FeAl0.5Si0.5 (CFAS)/n-GaAs Schottky tunnel junctions fabricated with different deposition temperature of the CFAS (TCFAS). CFAS thin films were deposited on the n-GaAs at TCFAS ranging from room temperature to 300 °C, and 3T-Hanle signals were observed for all CFAS/n-GaAs junctions. Although the degree of structural ordering in the CFAS electrodes decreased and the rectifying characteristic disappeared as TCFAS decreased, the spin resistance area products (ΔRA) increased and the estimated spin relaxation time (τ) decreased monotonically with decreasing TCFAS. Moreover, the bias voltage dependence of ΔRA and τ became larger and smaller with decreasing TCFAS, respectively.
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