Abstract
A model is developed to describe the behavior of three-dimensionally nanostructured photovoltaic devices, distinguishing between isolated radial pn junctions and interdigitated pn junctions. We examine two specific interdigitated architectures, the point-contact nanojunction and the extended nanojunction, which are most relevant to experimental devices reported to date but have yet to be distinguished in the field. The model is also applied to polycrystalline CdTe devices with inverted grain boundaries. We demonstrate that for CdTe/CdS solar cells using low-quality materials, the efficiency of the extended nanojunction geometry is superior to other designs considered.
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