Abstract
A focused MeV ion beam line for nearly any element has been developed by combining a focusing system with a beam line of a tandem-type accelerator. A minimum beam spot size of 5.6 μm × 8.0 μm has been obtained for 2 MeV O + ions. This system has realized ion beam processing such as maskless MeV ion implantation and ion beam microanalysis by Rutherford backscattering (RBS) using heavy ions. RBS-mapping measurements of two- or three-dimensional structures with MeV heavy ions were demonstrated.
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