Abstract
The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with beam structures which are perforated and intact. Pull-in and pull-out characteristics are analyzed by using the FEM approach provided by IntelliSuite software, version 8.8.5.1. The FEM results are consistent with the published experimental data. This analysis shows the possibility of achieving a low pull-in voltage that is below 2 V for a ratio below 15:0.03:0.7 value for the graphene beam length, thickness, and air gap thickness, respectively. The introduction of perforation in the graphene beam-based NEM switch further achieved the pull-in voltage as low as 1.5 V for a 250 nm hole length, 100 nm distance between each hole, and 12-number of hole column. Then, a von Mises stress analysis is conducted to investigate the mechanical stability of the intact and perforated graphene-based NEM switch. This analysis shows that a longer and thinner graphene beam reduced the von Mises stress. The introduction of perforation concept further reduced the von Mises stress at the graphene beam end and the beam center by approximately ~20–35% and ~10–20%, respectively. These theoretical results, performed by FEM simulation, are expected to expedite improvements in the working parameter and dimension for low voltage and better mechanical stability operation of graphene-based NEM switch device fabrication.
Highlights
The success of the semiconductor industry depends on reliable performance and scalable manufacturing processes
We evaluated the mechanical stability of the NEM switch by von Mises stress analysis after validating the finite element (FEM) simulation results with the published experimental data for the pull-in characteristic of the fixed-fixed ends graphene-based NEM switch
It is worth to mention that the surface adhesion effect between graphene beam and bottom electrode contact is neglected as the influence of surface effect such as van der Waals force becomes insignificant as the device size increases
Summary
The success of the semiconductor industry depends on reliable performance and scalable manufacturing processes. Graphene is one of the suggested 2D materials for high-performance NEM switch application because of its superior properties namely high electron mobility excess of 200,000 cm2/V·s, high Young’s modulus of 1 TPa, superior current density capacity of 108 A/cm, the ultra-thin thickness of 0.335 nm and low resistivity of 1 μΩ·cm [9,10,11,12]. For these reasons, graphene-based NEM switch can provide better reliability and lower actuation pull-in voltage than a conventional switch [13]. The influence of the applied electric field on the intact and perforated graphene-based NEM switch were analyzed
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