Abstract
The authors have investigated the relationship between the trap states (exponential trap distribution in energy and density) and the thickness of N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl) benzidine (NPB). The thickness dependent hole mobility of NPB can be attributed to the trap states. The origin of deep trap states at thinner film can be attributed to both surface dipole of buckminsterfullerene and the interaction between NPB and indium tin oxide at the interface. The influence of interfacial trap states on charge drift mobility is getting weaker as the thickness increases and is negligible when the thickness of NPB is thicker than 300nm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
