Abstract
We performed thermo and piezoresistive measurements on GaN bulk samples grown with different techniques (PIMBE, MOCVD). By analysing the I(V) characteristics as a function of temperature, we found a temperature coefficient of resistance (TCR = a) of the same order of magnitude (a few percent per °C) as commercial thermistors, with a peak value of 19%/°C. The measured gauge factor is about five, a value comparable with that obtained for GaN by other groups. We also performed PC vs. temperature measurements on a MQW GaN/AlGaN finding a peak shift of about 0.4 meV/K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
