Abstract
AbstractBulk mechanical alloying (BMA) followed by hot pressing (HP) was used to prepare Mg2Si0.6Ge0.4 thermoelectric material with high densification. Starting from the elemental power mixture, the Mg2Si0.6Ge0.4 solid solution was solid‐state synthesized via BMA. In fact, the peaks for the cubic‐structured Mg2Si0.6Ge0.4 solid solution phase were detected after 300 cycles in BMA. The single phase of Mg2Si0.6Ge0.4 was synthesized at 600 cycles in BMA. Mg2Si0.6Ge0.4 showed p‐type semiconduction without doping. Effects of hot pressing conditions on thermoelectric properties were investigated. With increasing hot pressing temperature from 673 to 773 K and pressure from 500 MPa to 1 GPa, the electrical conductivity increased and the Seebeck coefficient decreased. The maximum figure of merit was obtained with the processing parameter of 600 cycles BMA and hot pressing at 773 K, 1 GPa for 1 h. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: physica status solidi (RRL) – Rapid Research Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.