Abstract
The thermo emf in Czochralski-grown silicon single crystals (Cz-Si) was experimentally studied in a range of pressures up to 20 GPa. The pressure dependences revealed phase transitions in the metallic phase of silicon, which passed from tetragonal to orthorhombic and then to hexagonal lattice. The high-pressure silicon phases, as well as the metallic high-pressure phases in ANB8−N semiconductors, possess conductivity of the hole type. As the pressure decreases, the emf behavior reveals transitions to the metastable phases Si-XII and Si-III. Preliminary thermobaric treatment of the samples at a pressure of up to 1.5 GPa and a temperature of T=50–650°C influences the thermoelectric properties of Cz-Si at high pressures.
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