Abstract
The thermoelectric properties of Bi-doped Mg 2Si (Mg 2Si:Bi=1: x) fabricated by spark plasma sintering process have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity ( ρ ) , Seebeck coefficient ( S), and thermal conductivity ( κ ) between 300 and 900 K. Bi-doped Mg 2Si samples are n-type in the measured temperature range. The electron concentration of Bi-doped Mg 2Si at 300 K ranges from 1.8×10 19 cm −3 for the Bi concentration x = 0.001 to 1.1×10 20 cm −3 for x = 0.02 . The solubility limit of Bi in Mg 2Si is estimated to be about 1.3 at% and first-principles calculation revealed that Bi atoms are expected to be primarily located at the Si sites in Mg 2Si. The electrical resistivity, Seebeck coefficient, and thermal conductivity are strongly affected by the Bi concentration. The sample of x = 0.02 shows a maximum value of the figure of merit, ZT, is 0.86 at 862 K.
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