Abstract
The temperature distribution in the growth system and the elastic thermal stress field in the growing crystal are calculated at three stages of the solidification process. Results indicate that at the early stages of growth excessive stresses are generated as the cone emerges from the encapsulant, and at later times the maximum stresses occur close to the solidification interface and the region where the crystal emerges from the encapsulant. Adjustment of heater power for reduction of stresses associated with excessive cooling of the crystal is found to be inadequate and result in enhanced convexity of the growth interface and generation of large stresses in that region.
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