Abstract
The authors have studied thermodynamic conditions for the vapor-phase deposition process in the hot wall epitaxy (HWE) and molecular beam techniques. It was applied to chalcogenides Bi2Te3 and Bi2Se3 which are the main components of thermoelectric devices. After a description of the chemical equilibria involved in the process equilibrium constant, the pressure of the components and the flux were calculated. By comparison with previously published experimental works concerning Bi2Te3 deposition, calculation results appear to be accurate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
