Abstract
In this paper we present a study of thermal reactions in Ti/Pd layers on n-Si(111) wafers. The layers were deposited by dc sputtering to thicknesses of 110 (Pd) and 100 nm (Ti). After deposition the samples were thermally treated in vacuum at temperatures up to 600°C, for 15 min. Structural changes were analysed with Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The sheet resistivity was also measured. It was found that the formation of the polycrystalline Pd 2Si phase is completed after thermal treatment at 400°C. With the increase of temperature up to 550°C, a pronounced silicon diffusion through the formed silicide layer was observed. At the highest temperature of 600°C, the TiSi reaction at the Pd 2Si/Ti interface is initiated.
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