Thermally annealed silicon nitride films: Electrical characteristics and radiation effects

Abstract

Electrical characteristics, including retention under 60Co γ-ray irradiation of MNOS (metal-nitride-oxide-semiconductor) structures with LPCVD (low-pressure chemical-vapor-deposited) silicon nitride have been investigated. Capacitance-voltage techniques were used to measure injected, retained, and equilibrium charge. Current-voltage techniques were used to measure voltage and temperature dependence of charge transport. Measurements were made on MNOS with the following nitride annealing histories: (1) as-deposited at 750 °C, (2) 950 °C in N2, and (3) 950 °C in N2 followed by 900 °C in H2. Internal IR reflection techniques were used to measure chemically bonded hydrogen in the nitride films. Annealing at 950 °C in N2 (1) decreased the concentration of hydrogen, (2), decreased equilibrium positive charge, and (3) increased low- and high-field transport. Partial restoration of the as-deposited characteristics was achieved by subsequent annealing in H2 at 900 °C. Charge loss (retention) under 60Co γ-ray irradiation is essentially independent of high-temperature annealing whereas degradation is observed for net negative charge retention measured in the absence of ionizing radiation. Effects of annealing on MNOS structures and models to explain the results are discussed.