Abstract
Electronic transport properties of porous Si nanowires either with embedded Si quantum dots or with a percolative crystalline path are studied as a function of the temperature for the first time. We show that unlike bulk porous Si, the predesigned structure of the wires results in a single distinct conduction mechanism such as tunneling in the former case and variable range hopping in the latter case. We demonstrate that the geometry of the systems with a large internal surface area and high density of the Si quantum dots have a significant conduction enhancement compared to bulk porous silicon. These results can also improve the understanding of the basis of the different electronic transport mechanisms reported in bulk porous silicon.
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