Abstract
Thermal stability of TiSi 2 on blank, high-dose BF 2 +-, B +-, As +-, and P +-implanted silicon has been investigated by both cross-sectional and plan view transmission electron microscopy as well as by sheet resistance measurements. The surface morphology of TiSi 2 was found to be significantly influenced by the implantation in silicon substrate. Simultaneous presence of B and F was found to be most effective in retarding the degradation of surface morphology of the TiSi 2 thin films. Sheet resistance data were found to correlate well with the morphological and microstructural observation. The mechanism for the stabilization of silicide films are discussed.
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