Abstract
The use of SiO2 thin films as the gate dielectric is quickly reaching a limitation due to the rapid increase in tunneling current and worsened device reliability. A logical alternative is to use a gate insulator with a higher relative dielectric constant (high-k) than silicon dioxide (3.9), thereby spurring tremendous research activities to produce better high-k gate dielectric materials. In this paper, the recent progress made in our laboratory on the high-k materials is described. The various means to improve the thermal stability of high-k materials like Ta2O5, ZrO2, and HfO2 deposited on Si and their electrical properties will be discussed. The characteristics of Al2 O3 gate dielectrics on fully-depleted SiGe-on-insulator (SGOI) will also be described
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