Abstract
The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these films is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. In this study, time domain thermoreflectance is used to interrogate the thermal conductivity and the thermal boundary resistance of routinely used high-k dielectrics, aluminum oxide, hafnium oxide, and titanium oxide films ALD grown on silicon, as well as films of hafnium zirconium oxide, which has demonstrated potential for applications in energy storage devices as well as electronic memory devices and architectures.
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