Abstract
AbstractWe present the studies of the thermal stability of various metal including Au, Ti, Pt, Pd and Pt/Ti/Pt/Au Schottky contacts on strained Ga0.2In0.8P/InP semiconductors. Auger electron spectroscopy (AES) analysis and cross-sectional TEM of the thermally annealed Schottky diode were performed to investigate the failure mechanism. For Pt/Ti/Pt/Au schottky contacts on strained GalnP/InP, no significant change was found for samples annealed up to 350°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 400°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor. Finally InGaAs/InP doped channel heterojunction FET's (DC-HFET's) with a GaInP Schottky barrier enhancement layer (SBEL) were grown and fabricated. The 0.25 μm gate-length devices showed excellent DC and RF performance, with anfi of 117 GHz and an fmax of 168 GHz.
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