Abstract
The authors applied the temperature-dependent microphotoluminescence to study the thermal quenching of exciton lines related to localized emission from GaInNAs. It has been observed that the dispersion of localization energy is very strong (∼0–150 meV) whereas the activation energy of each individual line is the same within the experimental error (∼6 meV). This suggests that the main source of sharp line features are excitons localized on deep donor(acceptor)like states. At low temperatures these states can participate in radiative recombination due to the coulomb attraction between electrons and holes whereas at higher temperatures they still trap carriers but these carriers recombine nonradiatively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.