Abstract
A thermal model based on the polynomial relationship of ns and EF is presented. The effect of temperature rise due to self-heating is studied on various parameters viz. polarization, electron mobility, velocity saturation, low-field mobility and thermal conductivity of substrate. Parasitic resistances and channel length modulation were also taken into consideration. The relationship between self-heating effect and device parameters was studied. The model is based on closed-form expressions and does not require elaborate computation. After including self-heating effect in calculations of current–voltage characteristics, our results agreed well with published experimental data.
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