Abstract
Construction of molecular devices is one of the most promising approaches for the ultimate miniaturization of electronic devices, the groundwork of which is the fabrication of nanogap electrodes. Here we report a method to fabricate nanogap electrodes through thermal annealing based on single grain boundary junction. By performing low temperature thermal process, single grain boundary junction can be broken and change into a suspended gap with gap width down to sub-5 nanometers, which is beyond the fabrication precision of traditional lithography technologies. With the advantage of shape stability, no debris and high time efficiency, such nanogap electrodes is promising in constructing molecular devices with two or three-terminals.
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