Abstract
On the basis of the analysis of the volume correspondence of the phases in the active gate system Si-SiO2, the possibility of obtaining a negative charge in the shutter system of submicron LSI is shown. Such a technological method has been experimentally verified at low temperature oxidation of silicon, which is patented. Studies have established that the magnitude of charge at the interphase boundary can be significantly influenced by introducing into the oxidizing atmosphere of halogen-containing compounds.
Highlights
We know that the effective charge in the thermal oxide on the electrostatic silicon substrate orientations [111] and [100] is positive
The possibility of obtaining a negative charge at the boundary of the Si-SiO2 section was investigated on the basis of the analysis of the nature of the defects occurring on the interphase boundary
In order to obtain a purely negative charge, in our opinion, it is necessary to ensure the growth of SiO2 oxide at a possibly lower temperature, which will reduce the probability of formation in the oxide film of α-crystallobalite
Summary
We know that the effective charge in the thermal oxide on the electrostatic silicon substrate orientations [111] and [100] is positive. The scrubbing of the natural silicon oxide layer prior to the growth of the low temperature new ion beam method is used in highquality MES technology of the sub-micron structures of the LSI to obtain accurate high-stability SiO2 films as a screw dielectric.
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