Abstract
In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge2Sb2Te5 (GST) which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of Ge2Sb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric (IMD) deposition process can ease the thermal impact of line-GST PRAM cell.
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