Abstract
This work investigates the floating body effect (FBE) on the partially depleted SOI devices at various temperatures for high-performance 0.1 μm MOSFET. The thermal effect on the device’s characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET without body contacted (FB-SOI). It is found that the threshold voltage ( V th) and the off state drain current ( I OFF) of the BC-SOI devices are more temperature sensitive than those of the FB-SOI devices. For operation at higher temperatures, there is no apparent difference in driving capability between the BC-SOI and FB-SOI MOSFETs.
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