Abstract
The diffusion profiles of buried Be and Si doped by focused ion beam (FIB) implantation in GaAs after annealing were investigated. The diffusion coefficients of Be and Si were determined by fitting from the results of computer calculations. The diffusion coefficient of FIB-doped Be was enhanced by excess interstitial Be. Beryllium diffusion profiles expand by annealing with a high dose at 850°C. The concentration-dependent diffusion of Si in GaAs doped using a molecular beam was observed. The diffusion coefficient of Si heavily doped by FIB, however, was undetectably small in contrast with that of Be at 850°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
