Abstract
ABSTRACTMass spectrometry and calorimetry experiments on hydrogen evolution in amorphous Si:H and SiC:H nanoparticles grown by Plasma-Enhanced Chemical-Vapor Deposition (PECVD) are reported. The evolution spectra in a-Si particles are very similar to those found in films. The dynamic constants of the low-temperature peak confirm that this process is the same as in films. It is argued that the high-temperature process may not be diffusion-controlled. Both processes are exothermic, indicating that most dangling bonds recombine after H-desorption. The Hevolution in SiC occurs at higher temperatures than in Si. The process is endothermic.
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