Abstract
We report the thermal conductivities of monolayer (1L) and bilayer (2L) WS2 grown by chemical vapor deposition (CVD), which are determined by use of temperature and excitation dependences of E 2g 1 and A1g Raman modes. The first-order temperature coefficients of E 2g 1 and A1g modes in both supported and suspended WS2 layers were extracted. The frequency shift of the A1g mode with temperature is larger than that of the E 2g 1 mode for 1L-WS2, which is attributed to stronger electron-phonon coupling for the A1g mode than that for the E 2g 1 mode. Moreover, by use of the shift of the phonon mode induced by laser heating, the thermal conductivities at room temperature were estimated to be 32 and 53 W/(m·K) for 1L- and 2L-WS2, respectively. Our results provide fundamental information about the thermal properties of WS2 layers, which is crucial for developing applications of atomically-thin WS2 devices.
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