Abstract
The final part is presented of a theoretical investigation into the vacuum nanotriode designed by Driskill-Smith et al. [2]. A modification is proposed to the original configuration of the device, in which the anode aperture is not sealed with a Ti capping layer, and an extra anode electrode is introduced. The three-dimensional model of Part 1 is extended to include this case. It is revealed by computer simulation that negative transconductance can easily be obtained with the modified nanotriode. This feature should make it useful as a switch in computers that would combine high speed with radiation hardness.
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