Abstract
This paper reviews the current status of the theory of the spatial distributions of range and energy deposition by energetic atomic projectiles incident on semiconductor and metal targets. Recent advances in calculations by several techniques are considered. It is now possible to determine these distributions quite accurately; for any ion-target combination over a wide range of energies, although additional work is needed for heavy ions incident on light targets at moderate energies. Depth distributions of energy deposited into ionization for ions incident on silicon and germanium targets are presented for the first time here.
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