Abstract
A theory of nonresonant Raman scattering from interface phonons in GaAs/AlAs superlattices is described. The linear-response functions of the phonon-polariton electric field to the polarization induced by the light in the superlattice sample are derived. The electric-field Green's functions are used to determine the Raman-scattering cross section and spectral intensities. The strength of the scattering from each of the four interface modes agrees well with experimental results for backscattering from a (110) surface.
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