Abstract
The ionization energy and expectation value of the radius corresponding to the states of several interstitial impurities in Ge and Si are calculated. The range of the valence electron of the impurity is divided into two regions; an inner region, which is treated microscopically, and an outer region, which is treated macroscopically. The separation radius, which is primarily a function of the host crystal, is a parameter of the calculation. At a critical separation radius a rapid change of ionization energy and wave-function results. The calculations are carried out for several impurities in column I of the periodic table.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
