Theory of high performance piezotronic quantum harmonic oscillator under nonuniform strain

Abstract

Piezotronics and piezo-phototronics are two emerging fields that involve high performance piezoelectric semiconductor devices. The nonuniform strain can create nonlinear piezopotential even in nonpiezoelectric materials such as silicon. Here, we propose theory of quantum piezotronics under nonuniform strain using a typical example of the interaction between independently trapped charges under nonlinear piezopotential. The trapped-ion motional frequency along the x direction can increase from 4 MHz to 25 MHz, and the electric-field noise can decrease by 15 times under nonuniform strain. This piezotronic harmonic oscillator based on trapping wells not only provides a good understanding of quantum piezotronics but also a guide for developing peizotronic devices for quantum computing.