Abstract
Abstract The energy relaxation rate of two-dimensional (2D) hot carriers due to LO phonon emission is explored theoretically by assuming a simple quantum-well structure for GaAsAl x Ga 1− x As superlattices. The differences of energy loss rate between electrons and holes are shown with emphasis on the roles of free carrier screening and form factors. The picosecond cooling behavior of photoexcited 2D carriers is presented on the basis of the polar carrier-LO phonon coupling process.
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