Abstract
Assuming-the creation at low temperatures by ionizing radiation of two halogen atoms at adjacent halide ion sites, a tight-binding approximation is used to estimate the time constants for the electronic and atomic relaxation processes. lt is concluded that an appreciable fraction of the atoms may move before the positive holes further separate. The atomic motion is nost probably to form two negative halogen molecule ions rather than a neutral halogen molecule. Each haolgen molecule ion acquires momentum in the STA110! direction from interaction with the asymmetric crystalline field; and by billiard ball'' collisions concurrent with tunnelling of the positive hole. separation of the halide vacancy and the molecule ion may be achieved. A elated mechanism of defect formation, requiring only a single ionization, is considered. (auth)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
