Abstract
The binding energy of the ground state of a bound polaron near an interface of a polar-polar semiconductor is obtained, using a variational method, as a function of the static electric field applied perpendicular to the interface and the impurity position. Assuming that the electron couples with both the bulk LO phonon and the interface phonons, it is shown that the total polaronic correction decreases the binding energy and depending on the system it is found that a minimum external electric field is necessary to obtain a stable, bound ground state. We have shown that the contribution of the interface phonons to the effective interaction between the electron and the impurity is repulsive. Numerical results are present for systems constituted by the heterojunctions AlAs-GaAs and GaAs-GaSb.
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