Abstract
A theory of the short-circuit 1/f noise currents in semiconductor devices with one-dimensional geometry is derived using the noise current density equation with the 1/f noise source term based on the Hooge's empirical 1/f noise relation. It is shown that both the number fluctuation model and the mobility fluctuation model for 1/f noise give the same result. The newly derived 1/f formula is shown to explain the measured 1/f noise currents of Si Schottky barrier rectifiers under both forward and reverse bias conditions with a single set of Hooge parameters of electrons and holes for a given device.
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