Abstract
The line width roughness (LWR) is a significant issue in the development of chemically amplified resists. The increase in sensitizer concentration is inevitable for the suppression of LWR in the sub-10 nm fabrication. In this study, we investigated the effects of photodecomposable quenchers from the viewpoint of the excluded volume effect, assuming line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 28 nm pitch). The pattern formation of chemically amplified electron beam resists with photodecomposable quenchers was calculated and compared with those with conventional quenchers. It was found that the sum of the concentrations of acid generators and quenchers (photodecomposable or conventional quenchers) can be reduced without decreasing the chemical gradient (an indicator of LWR) by using the photodecomposable quenchers. The photodecomposable quenchers are considered essential in the high-resolution fabrication.
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