Abstract
In this paper, we have theoretically investigated the impact of different composition ‘x’ of the barrier height on transmission coefficient and IV characteristics of GaAs/Ga1−xAlxAs double barrier heterostructure. In this study, GaAs/Ga1−xAlxAs based double barrier heterostructure is selected at operating temperature 10 K. The calculated results show that IV characteristic and transmission coefficient are the crucial measurable quantity to anticipate the double barrier heterostructure property. When the height of barrier is less, then the transmission coefficient and IV characteristics of GaAs/Ga1−xAlxAs double barrier heterostructure are high. The calculated results are in good agreement with the available reported results from the other workers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
