Abstract
The electronic structure of group IV impurities in InP has been analysed using a discrete variational Xalpha self-consistent field method in the embedded scheme within the local-density framework. The pure semiconductor gap is calculated to be 1.44 eV in very good agreement with the experimental value of 1.41 eV. The defected clusters are studied by substituting C, Si, Ge and Sn at the central In site. All the impurities but C show a donor-like behaviour with states introduced deep in the gap region of the host semiconductor. The charge distributions and the density of states are calculated. Comparison with experimental results are made wherever available.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
