Abstract
We have studied Fermi level pinning of Hf-based high-k gate stacks based on thermodynamics by our O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium. O injection to aim O vacancy elimination is hopeless, since O vacancy elimination condition is equivalent to the Si substrate oxidation which leads to the increase in EOT. We also studied the mechanism of FLP induced by H2 anneal. FLP by H2 anneal is governed by the O vacancy annihilation reaction by reducing SiO2 interface layer. Moreover, we briefly discuss the recipe for obtaining band-edge-work-function metals.
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