Abstract
In this work, we discuss the performance of the active laser region realized respectively by bulk (3D) and quantum well (2D) semiconductors, with emphasis on the basic behavior of the optical gain. Calculations are based on a semi-classic model used to describe the performance of the bulk semiconductor (3D) and quantum well (2D) actives zones. It is revealed that the use of quantum well structures results in improvement of these properties and brings several new concepts to the active laser region.
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